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TGF3015-SM

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Shenzhen Chive Electronics Co., Ltd.

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TGF3015-SM

Transistor Polarity : N-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 17.1 dB

Transistor Type : HEMT

Pd - Power Dissipation : 15.3 W

Package / Case : QFN-EP-16

Output Power : 11 W

Vds - Drain-Source Breakdown Voltage : 32 V

Packaging : Tray

Id - Continuous Drain Current : 557 mA

Vgs - Gate-Source Breakdown Voltage : - 2.7 V

Manufacturer : Qorvo

Description : RF JFET Transistors .03-3GHz Gain 17dB P3dB 9.3W@2.4GHz GaN

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The TGF3015-SM,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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