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TGF2979-SM

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Shenzhen Chive Electronics Co., Ltd.

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TGF2979-SM

Transistor Polarity : N-Channel

Technology : GaN SiC

Product Category : RF JFET Transistors

Mounting Style : SMD/SMT

Gain : 11 dB

Transistor Type : HEMT

Output Power : 22 W

Package / Case : QFN-20

Maximum Operating Temperature : + 225 C

Vds - Drain-Source Breakdown Voltage : 32 V

Packaging : Tray

Id - Continuous Drain Current : 1.8 A

Vgs - Gate-Source Breakdown Voltage : - 2.7 V

Pd - Power Dissipation : 49 W

Manufacturer : Qorvo

Description : RF JFET Transistors 8-12GHz 25W GaN PAE 50% Gain 11dB

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The TGF2979-SM,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!

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